Fabrication of transparent CuxZnyS/ZnS heterojunction diodes by photochemical deposition. Issue 6 (30th March 2015)

• Record Type: Journal Article
• Authors: Ichimura, Masaya; Maeda, Yosuke; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 504
• Page End: 507
• Publication Date: 2015-03-30
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400229
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A Cu_xZn_yS/ZnS transparent pn heterostructure was successfully fabricated by the photochemical deposition (PCD) from aqueous solutions. In PCD, the substrate was immersed in the solution to a depth of about 2‐3 mm from solution surface, and irradiated with the light of an ultra‐high‐pressure mercury arc‐lamp through a lens. The growth solution of Cu_xZn_yS contained 5 mM CuSO₄, 1 mM ZnSO₄, 600 mM Na₂S₂O₃, and 3 mM Na₂SO₃. The growth solution of ZnS contained 1 mM ZnSO₄, 600 mM Na₂S₂O₃, and 3 mM Na₂SO₃. p‐type conduction of Cu_xZn_yS and n‐type conduction of ZnS were confirmed by the photoelectrochemical measurement. Both the films had high optical transmission (&gt;70%) in the visible range. The Cu_xZn_yS/annealed‐ZnS heterostructure showed rectification properties and photoresponse to AM1.5 irradiation. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>