Fabrication of Cu2ZnSnSe4 thin films by selenization of precursor using Cu2ZnSnSe4 compound for photovoltaic applications. Issue 6 (30th March 2015)

• Record Type: Journal Article
• Authors: Nakashima, M.; Yamaguchi, T.; Kusumoto, K.; Yukawa, S.; Sasano, J.; Izaki, M.; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 729
• Page End: 732
• Publication Date: 2015-03-30
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400279
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Cu₂ZnSnSe₄ ingot was synthesized and then used it and Na₂Se powder as evaporation materials to prepare a precursor for selenization process in order to fabricate Cu₂ZnSnSe₄ thin films for solar cell applications. From EPMA analysis, the Sn content in the thin films was approximately constant with increasing Sn mole ratio and the Se content was under 50 at.% in the first experiment. The Se content in the thin films increased to around 50 at.% by the addition of Se layer in second experiment. XRD study showed that the thin films had a kesterite phase in Cu₂ZnSnSe₄. The Se layer addition enhanced to grow thin films having a close‐packed structure and columnar grains. Cu₂ZnSnSe₄ thin film solar cells demonstrated V_oc= 282 mV, I_sc= 3.00 mA/cm². (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>