Improvement of In2S3/ZnCuInS2 interfaces for wide‐gap solar cells. Issue 6 (22nd April 2015)

• Record Type: Journal Article
• Authors: Yamamoto, Teruaki; Negami, Takayuki; Matsubara, Koji; Niki, Shigeru; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 769
• Page End: 772
• Publication Date: 2015-04-22
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400313
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We have fabricated superstrate In₂S₃/ZnCuInS₂ (Zn_2xCu_1‐xIn_1‐xS₂, ZCIS) solar cells as the top cell of multi‐junction solar cells. The ZCIS and In₂S₃ thin films were deposited by spray pyrolysis deposition (SPD) and an efficiency of 4.4% was achieved with bandgap of 1.8 eV. However, in the structure of superstrate type solar cells, interdiffusion have been caused between the buffer layer and the ZCIS layer. In order to suppress the interdiffusion, we have fabricated In₂S₃/ZCIS substrate type solar cells. The thickness of the interdiffusion region decreased from 70 nm of the superstrate cell to 15 nm of the substrate cell. As a result, the substrate cell with bandgap of 1.8 eV showed V_OC of 0.71 V and FF of 0.55 higher than those of the superstrate cells. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>