Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92. Issue 6 (22nd April 2015)

• Record Type: Journal Article
• Authors: Gurieva, G.; Dimitrievska, M.; Zander, S.; Pérez‐Rodríguez, A.; Izquierdo‐Roca, V.; Schorr, S.; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 588
• Page End: 591
• Publication Date: 2015-04-22
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400307
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Quaternary Cu₂ZnSn(S_1‐xSe_x)₄ compounds are promising semiconductor materials for absorber layer in thin film solar cells. Record efficiency devices (12.6%) exhibit an off‐stoichiometric composition of the absorber layer. These deviations from stoichiometry cause intrinsic point defects, which determine the electronic properties of the semiconductor significantly. A structural analysis of a nearly C‐type off‐stoichiometric Cu and Sn rich and Zn poor Cu₂ZnSn(S_1‐xSe_x)₄ mixed crystal with x=0.48 by a neutron diffraction investigation was performed. The average neutron scattering length method was applied, showing that the mixed crystal adopts the kesterite type structure. A detailed cation distribution analysis revealed the occurrence of Zn_Cu(2a) and Sn_Zn anti‐site point defects additional to the Cu‐Zn disorder in the planes at z=1/4 and 3/4. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>