Semiconducting asphaltene thin films: preparation and characterization. Issue 6 (14th April 2015)

• Record Type: Journal Article
• Authors: Nassar, Ibrahim M.; Mamiyev, Zamin; Khalilova, Khuraman; Mammadov, Eldar; Aliyeva, Yegana; Alekperov, Oktay; Bayramov, Ayaz; Mamedov, Nazim; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 553
• Page End: 555
• Publication Date: 2015-04-14
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400365
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Asphaltene thin films of 100‐500 nm thicknesses were deposited on soda lime glass substrates from toluene solution by spray pyrolysis method. Atomic force microscopy (AFM), photoluminescence (PL), spectroscopic ellipsometry (SE), and electron paramagnetic resonance (EPR) methods were used for characterization of the films. The obtained films were found to be broad band semiconducting material with band gap energy ∼ 3.1 eV and exhibited n‐type conductivity with resistivity ρ ∼ 8·10²Ω·cm. Concentration of free radicals and g‐factor were about of ∼ 10¹⁸ spin/g and 2.00307, respec­tively. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>