Electronic structure of YbNiX3 (X =Si, Ge) studied by hard X‐ray photoemission spectroscopy. Issue 6 (14th April 2015)

• Record Type: Journal Article
• Authors: Sato, Hitoshi; Utsumi, Yuki; Kodama, Junichi; Nagata, Heisuke; Avila, Marcos A.; Ribeiro, Raquel A.; Umeo, Kazunori; Takabatake, Toshiro; Mimura, Kojiro; Motonami, Satoru; Anzai, Hiroaki; Ueda, Shigenori; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 620
• Page End: 623
• Publication Date: 2015-04-14
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400312
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>lectronic structure of the Kondo lattices YbNi<italic>X</italic>₃ (<italic>X</italic> =Si, Ge) has been investigated by means of hard x‐ray photoemission spectroscopy (HAXPES) with <italic>hν</italic> = 5.95 keV. From the Yb 3<italic>d</italic> HAXPES spectra, the Yb valence in YbNiSi₃ is estimated to be ∼ 2.92, which is almost temperature‐independent. On the other hand, the valence in YbNiGe₃ is estimated to be 2.48 at 300 K, showing significant valence fluctuation, and gradually decreases to 2.41 at 20 K on cooling. The Ni 2<italic>p</italic>_3/2 and Yb³⁺ 4<italic>f</italic> peaks exhibit opposite energy shifts amounting to ∼ 0.6 eV between YbNiSi₃ and YbNiGe₃. We propose a simple model for the electronic structure of YbNi<italic>X</italic>₃ based on the HAXPES results. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>