Cu2SnS3 thin film solar cells prepared by thermal crystallization of evaporated Cu/Sn precursors in sulfur and tin atmosphere. Issue 6 (30th March 2015)

• Record Type: Journal Article
• Authors: Nakashima, M.; Yamaguchi, T.; Itani, H.; Sasano, J.; Izaki, M.; Tsuboi, Nozomu; Wakita, Kazuki; Yamada, Akira; Shirakata, Sho; Wada, Takahiro; Niki, Shigeru; Imaizumi, Mitsuru; Hara, Kazuhiko; Uchitomi, Naotaka
• Is Part Of: Physica status solidi. Volume 12:Issue 6(2015:Jun.)
• Page Start: 761
• Page End: 764
• Publication Date: 2015-03-30
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400269
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Cu₂SnS₃ thin films were prepared by crystallization in sulfur and tin mixing atmosphere from the stacked Cu/Sn precursors deposited by sequential evaporation of Sn and Cu elements. From EPMA analysis, the composition of the thin film was approximately constant regardless changing Sn mole ratio in the precursor. However, the composition of inside of the thin films and Mo layer had gradation. The Raman analysis showed that the spectrum corresponded to monoclinic Cu₂SnS₃. Cu₂SnS₃ thin films were applied to the fabrication of Cu₂SnS₃ solar cells. The values of V_oc and I_sc increased with decreasing Sn mole ratio in the precursor. The largest V_oc of 247.5 mV was achieved in sample of Cu/Sn mole ratio of 2/1.2, which is comparable with early reported value of V_oc. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>