Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors. Issue 24 (19th February 2015) - Chen, Guihuan
Abstract Ultrathin Bi2S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2S3‐based photoconductor shows high sensitivity to visible–near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W−1, high detectivity of ≈1011 Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.