Electrical Properties of Lead‐Free Na1/2Bi1/2TiO3 Relaxor Ferroelectric Ceramics Doped with Hafnium or Zirconium. Issue 6 (23rd March 2015)

• Record Type: Journal Article
• Authors: Kırsever, Derya; Yılmaz, Hüseyin; Suvaci, E.
• Is Part Of: Journal of the American Ceramic Society. Volume 98:Issue 6(2015)
• Page Start: 1858
• Page End: 1864
• Publication Date: 2015-03-23
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.13550
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" id="jace13550-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Ferroelectric (Na_1/2Bi_1/2)TiO₃ and its various solid solutions have been drawing special attention as a new candidate for their lead‐based counterparts. In this study, therefore, hafnium‐ or zirconium‐doped grain‐oriented (Na_1/2Bi_1/2)TiO₃ ceramics with &lt;001&gt;_pc orientation were fabricated by templated grain growth method using anisotropically shaped SrTiO₃ template particles. These molten salt synthesized SrTiO₃ platelets were tape cast with calcined (Na_1/2Bi_1/2)TiO₃ powders, and then sintered at 1200°C for 6 h. Texture fractions up to 70% have been obtained. Unipolar strains up to &gt;0.25% were measured. Doped ceramics showed a "relaxor‐like" ferroelectric behavior. A broad dielectric peak with a slim hysteresis loop was present for hafnium‐ or zirconium‐doped samples. Electrostrictive coefficient of hafnium‐doped (Na_1/2Bi_1/2)TiO₃ ceramics were found to be 0.032 m⁴/C², which is much larger than that of PMN‐based electrostrictive materials. Electromechanical properties of hafnium‐ and zirconium‐doped (Na_1/2Bi_1/2)TiO₃ ceramics under electric bias were studied as well.</p> </abstract>