Monolayer Field‐Effect Transistors of Nonplanar Organic Semiconductors with Brickwork Arrangement. (27th April 2015)

• Record Type: Journal Article
• Authors: Shan, Liang; Liu, Danqing; Li, Hao; Xu, Xiaomin; Shan, Bowen; Xu, Jian‐Bin; Miao, Qian
• Is Part Of: Advanced materials. Volume 27:Number 22(2015)
• Page Start: 3418
• Page End: 3423
• Publication Date: 2015-04-27
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201500149
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201500149-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Twisted hexabenzoperylenes (HBPs)</bold> that are equipped with four methoxyl groups and two alkyl chains self‐assemble into lamellar semiconductors with an unusual brickwork arrangement of twisted π‐faces. As a result of this brickwork arrangement, through a dip‐coating process, these HBPs easily form one‐molecule‐thick nanosheets that behave as p‐type organic semiconductors in monolayer transistors with field‐effect mobility of up to 0.076 cm² V⁻¹ s⁻¹. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjrk4h2pb" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>