Cite
HARVARD Citation
Garbe, V. et al. (n.d.). Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy. Crystal research and technology. 50 (6), p. NA. [Online].
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Garbe, V. et al. (n.d.). Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy. Crystal research and technology. 50 (6), p. NA. [Online].