In‐situ observation of InGaN quantum well decomposition during growth of laser diodes. Issue 6 (6th May 2015)

• Record Type: Journal Article
• Authors: Hoffmann, V.; Mogilatenko, A.; Zeimer, U.; Einfeldt, S.; Weyers, M.; Kneissl, M.
• Is Part Of: Crystal research and technology. Volume 50:Issue 6(2015:Jun.)
• Page Start: 499
• Page End: 503
• Publication Date: 2015-05-06
• Subjects: Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201500073
• Languages: English
• ISSNs: 0232-1300

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="crat201500073-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>InGaN‐based active regions of blue laser diode structures can deteriorate during overgrowth by p‐layers at high temperatures. Destructive ex‐situ transmission electron microscopy analysis shows that the QWs decompose which results in formation of metallic In precipitates and voids in the active region. We demonstrate that this process can be monitored already during growth by in‐situ wafer reflectance measurements allowing for optimization of the overgrowth parameters to avoid decomposition. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjrk4cs6f" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>