Bipolar resistive switching behaviours of perovskite CaBi4Ti4O15 thin films. (April 2015)

• Record Type: Journal Article
• Authors: Lin, J. Y.; Wu, C. L.
• Is Part Of: Materials research innovations. Volume 19:Number 1(2015)
• Page Start: S1-407
• Page End: S1-409
• Publication Date: 2015-04
• Subjects: Materials -- Research -- Periodicals; Matériaux -- Recherche -- Périodiques; 620.1105
• DOI: 10.1179/1432891715Z.0000000001580
• Languages: German
• ISSNs: 1432-8917

Abstract

<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>The perovskite CaBi₄Ti₄O₁₅ thin film for resistive random access memory device application has been investigated in this work. Experimentally, the CaBi₄Ti₄O₁₅ thin films were deposited on the indium-tin oxide/glass substrates by radio-frequency (RF) magnetron sputtering and then annealed by rapid thermal annealing. The annealing effects on the bipolar resistive switching behaviours and the conduction mechanisms of the Al/CaBi₄Ti₄O₁₅/indium-tin oxide resistive random access memory structure with a compliance current of 0·1 A were discussed in this work. The results show a stable bipolar resistive switching with a retention time of over 1 × 10⁴ s and a high resistance state/low resistance state ratio larger than 5 × 10².</p> </abstract>