Tin perovskite/fullerene planar layer photovoltaics: improving the efficiency and stability of lead-free devices1. Issue 21 (7th June 2015)

• Record Type: Journal Article
• Authors: Marshall, Kenneth P.; Walton, Richard I.; Hatton, Ross A.
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 21(2015)
• Page Start: 11631
• Page End: 11640
• Publication Date: 2015-06-07
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5ta02950c
• Languages: English
• ISSNs: 2050-7488

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjqwn6x5w" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />The preparation of CsSnI₃ films at room temperature with defect densities low enough for light harvesting in photovoltaic devices is reported, along with a new strategy for improving device stability and evidence that the energetics at the perovskite/fullerene interface is a key determinant of the open-circuit voltage.</p> </abstract>