AniCryDe: calculation of elastic properties in silicon and germanium crystals. (1st June 2015)

• Record Type: Journal Article
• Authors: Camattari, Riccardo; Lanzoni, Luca; Bellucci, Valerio; Guidi, Vincenzo
• Is Part Of: Journal of applied crystallography. Volume 48:Part 3(2015:Jun.)
• Page Start: 943
• Page End: 949
• Publication Date: 2015-06-01
• Subjects: Crystallography -- Periodicals; 548.05
• DOI: 10.1107/S1600576715005087
• Languages: English
• ISSNs: 0021-8898

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>A code to calculate the anisotropic elastic properties in a silicon or germanium crystal is introduced. The program, named <italic>AniCryDe</italic>, allows the user to select the crystallographic configuration of interest. For the selected crystallographic orientation, <italic>AniCryDe</italic> calculates several key mechanical parameters, such as Young's modulus, Poisson's ratio and the shear modulus. Furthermore, the program displays both the compliance and the stiffness tensors concerning the crystallographic orientation of interest. The code enables the user to set several parameters through a user‐friendly control stage. As a result, the user obtains the complete displacement field of a deformed crystal and the curvature of any crystallographic plane. Manufacturing wafer defects such as miscut and misflat angle are also taken into account.</p> </abstract>