Composition and bandgap control of AlxGa1−xN films synthesized by plasma-assisted pulsed laser deposition1. Issue 20 (28th May 2015)

• Record Type: Journal Article
• Authors: Cai, Hua; Liang, Peipei; Hübner, René; Zhou, Shengqiang; Li, Yanli; Sun, Jian; Xu, Ning; Wu, Jiada
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 20(2015)
• Page Start: 5307
• Page End: 5315
• Publication Date: 2015-05-28
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc00475f
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjp0dr3cg" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Ternary Al_{<italic>x</italic>}Ga_{1−<italic>x</italic>}N films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in nitrogen plasma generated by electron cyclotron resonance discharge of N₂ gas.</p> </abstract>