Highly Sensitive and Selective Field‐Effect‐Transistor NonEnzyme Dopamine Sensors Based on Pt/Conducting Polymer Hybrid Nanoparticles. Issue 20 (21st January 2015)

• Record Type: Journal Article
• Authors: Lee, Jun Seop; Oh, Jungkyun; Kim, Sung Gun; Jang, Jyongsik
• Is Part Of: Small. Volume 11:Issue 20(2015)
• Page Start: 2399
• Page End: 2406
• Publication Date: 2015-01-21
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201403263
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Dopamine (DA), as one of catecholamine family of neurotransmitters, is crucially important in humans owing to various critical effects on biometric system such as brine circuitry, neuronal plasticity, organization of stress responses, and control of cardiovascular and renal organizations. Abnormal level of dopamine in the central nervous system causes several neurological diseases, e.g., schizophrenia, Parkinson's disease, and attention deficit hybperactivity disorder (ADHD)/attention deficit disorder (ADD). In this report, we suggest the fabrication of nonenzyme field effect transistor (FET) sensor composed of immobilized Pt particle decorated conducting‐polymer (3‐carboxylate polypyrrole) nanoparticles (Pt_CPPy) to detect dopamine. The hybrid nanoparticles (NPs) are produced by means of facile chemical reduction of pristine CPPyNP‐contained Pt precursor (PtCl<sub>4</sub>) solution. The Pt_CPPys are then immobilized on an amine‐functionalized (–NH<sub>2</sub>) interdigitated‐array electrode substrate, through the formation of covalent bonds with amine groups (–CONH). The resulting Pt_CPPy‐based FET sensors exhibit high sensitivity and selectivity toward DA at unprecedentedly low concentrations (100 × 10<sup>−15</sup><sc>m</sc>) and among interfering biomolecules, respectively. Additionally, due to the covalent bonding involved in the immobilization process, a longer lifetime is expected for the FET sensor.</p> </abstract>