Accelerated formation of the boron–oxygen complex in p‐type Czochralski silicon. Issue 5 (2nd April 2015)

• Record Type: Journal Article
• Authors: Hamer, Phillip; Hallam, Brett; Abbott, Malcolm; Wenham, Stuart
• Is Part Of: Physica status solidi. Volume 9:Issue 5(2015:May)
• Page Start: 297
• Page End: 300
• Publication Date: 2015-04-02
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510064
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201510064-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>This Letter reports on the acceleration of the rate of formation of the boron–oxygen defect in p‐type Czochralski silicon with illumination intensities in excess of 2.1 × 10¹⁷ photons/cm²/s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 × 10¹⁹ photons/cm²/s is shown to result in near‐complete defect formation within seconds. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>