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ChemInform Abstract: Influence of the Oxygen Content in Obtaining Tunable and Strong Photoluminescence from Low‐Temperature Grown Silicon Oxycarbide Films. Issue 23 (June 2015)
Record Type:
Journal Article
Title:
ChemInform Abstract: Influence of the Oxygen Content in Obtaining Tunable and Strong Photoluminescence from Low‐Temperature Grown Silicon Oxycarbide Films. Issue 23 (June 2015)
Main Title:
ChemInform Abstract: Influence of the Oxygen Content in Obtaining Tunable and Strong Photoluminescence from Low‐Temperature Grown Silicon Oxycarbide Films.
<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Amorphous SiC<sub>x</sub>O<sub>y</sub> films are prepared by very high frequency plasma enhanced chemical vapor deposition at 150 °C using a gas mixture of SiH<sub>4</sub>, CH<sub>4</sub>, and O<sub>2</sub> as the precursor.</p> </abstract>