(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3. Issue 18 (14th May 2015)

• Record Type: Journal Article
• Authors: Sarnet, Tiina; Hatanpää, Timo; Vehkamäki, Marko; Flyktman, Timo; Ahopelto, Jouni; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 18(2015)
• Page Start: 4820
• Page End: 4828
• Publication Date: 2015-05-14
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc00533g
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn30j0c5" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />An atomic layer deposition (ALD) process was developed for an important thermoelectric material Bi₂Se₃ utilizing dechlorosilylation reactions between BiCl₃ and (Et₃Si)₂Se precursors.</p> </abstract>