Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates. Issue 18 (14th May 2015)

• Record Type: Journal Article
• Authors: Park, Min-Ji; Yun, Da-Jeong; Ryu, Min-Ki; Yang, Jong-Heon; Pi, Jae-Eun; Kwon, Oh-Sang; Kim, Gi Heon; Hwang, Chi-Sun; Bak, Jun-Yong; Yoon, Sung-Min
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 18(2015)
• Page Start: 4779
• Page End: 4786
• Publication Date: 2015-05-14
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc00048c
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn30j41x" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Bending characteristics of flexible oxide thin-film transistors could be enhanced by optimizing the barrier layers on the polyethylene naphthalate substrate.</p> </abstract>