Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal–insulator transition process. Issue 19 (21st May 2015)

• Record Type: Journal Article
• Authors: Zhang, Peng; Jiang, Kai; Deng, Qinglin; You, Qinghu; Zhang, Jinzhong; Wu, Jiada; Hu, Zhigao; Chu, Junhao
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 19(2015)
• Page Start: 5033
• Page End: 5040
• Publication Date: 2015-05-21
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc00002e
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn30k25g" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />(a) Temperature dependence of the electrical resistivity of VO₂ films. (b) The <italic>T</italic>_MIT as a function of oxygen pressure. The inset is the hysteresis loop of <italic>E</italic>₂.</p> </abstract>