Direct growth of Sb2Te3 on graphene by atomic layer deposition. Issue 50 (4th June 2015)

• Record Type: Journal Article
• Authors: Zheng, Li; Cheng, Xinhong; Cao, Duo; Wang, Qian; Wang, Zhongjian; Xia, Chao; Shen, Lingyan; Yu, Yuehui; Shen, Dashen
• Is Part Of: RSC advances. Volume 5:Issue 50(2015)
• Page Start: 40007
• Page End: 40011
• Publication Date: 2015-06-04
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra04698j
• Languages: English
• ISSNs: 2046-2069

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn2mzwn9" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Graphene can avoid the oxidation of Sb₂Te₃, eliminate the generation of an interface layer and maintain the crystal structures of Sb₂Te₃.</p> </abstract>