Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT1. Issue 19 (21st May 2015)

• Record Type: Journal Article
• Authors: Zhou, Changjian; Wang, Xinsheng; Raju, Salahuddin; Lin, Ziyuan; Villaroman, Daniel; Huang, Baoling; Chan, Helen Lai-Wa; Chan, Mansun; Chai, Yang
• Is Part Of: Nanoscale. Volume 7:Issue 19(2015)
• Page Start: 8695
• Page End: 8700
• Publication Date: 2015-05-21
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr01072a
• Languages: English
• ISSNs: 2040-3364

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn2bn93g" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Ultra high-<italic>k</italic> dielectric enables low-voltage enhancement-mode MoS₂ transistor with high ON/OFF ratio, leading to low-power device.</p> </abstract>