Self‐Aligned Megahertz Organic Transistors Solution‐Processed on Plastic. (26th March 2015)

• Record Type: Journal Article
• Authors: Higgins, Stuart G.; Muir, Beinn V. O.; Wade, Jessica; Chen, Jiaren; Striedinger, Bernd; Gold, Herbert; Stadlober, Barbara; Caironi, Mario; Kim, Ji‐Seon; Steinke, Joachim H. G.; Campbell, Alasdair J.
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 5(2015:May)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-03-26
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500024
• Languages: English
• ISSNs: 2199-160X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The processing of complex nanoscale electronic structures on plastic substrates is a significant challenge, requiring the combination of low temperature, nonaggressive, and high resolution methods. Here a scalable process flow on plastic is presented tbat enables the fabrication of flexible nano­imprinted organic field‐effect transistors (OFETs) with self‐aligned contacts and solution‐processed semiconductor and dielectric layers, at processing temperatures ≤ 150 °C. OFETs are fabricated with device cutoff frequencies <italic>f</italic> &gt; 1 MHz at low operating bias <italic>V</italic>_DS = −15 V. The technique allows the patterning of metal structures over four orders of magnitude from 375 nm to 1 mm without the need for a rigid carrier, and provides a fabrication pathway to high performance nanostructured organic circuitry.</p> </abstract>