InGaN photocatalysts on conductive Ga2O3 substrates. Issue 5 (1st April 2015)

• Record Type: Journal Article
• Authors: Ogita, Taro; Uetake, Yusuke; Yamashita, Yoshihiro; Kuramata, Akito; Yamakoshi, Shigenobu; Ohkawa, Kazuhiro
• Is Part Of: Physica status solidi. Volume 212:Issue 5(2015:May)
• Page Start: 1029
• Page End: 1032
• Publication Date: 2015-04-01
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431731
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201431731-sec-0001" sec-type="section"> <p>We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga₂O₃ substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H₂ chemical energy. Their quantum efficiency was determined to be more than 1% at 404 nm by incident photon‐to‐current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga₂O₃ substrates are suitable for the photocatalysts.</p> </sec> </abstract>