Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs (Phys. Status Solidi A 5∕2015). Issue 5 (May 2015)

• Record Type: Journal Article
• Authors: Chen, Kevin J.; Yang, Shu; Tang, Zhikai; Huang, Sen; Lu, Yunyou; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Li, Baikui
• Is Part Of: Physica status solidi. Volume 212:Issue 5(2015:May)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-05
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201570428
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="graphical"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Wide bandgap III‐nitride (III‐N) power switching transistors are capable of delivering superior performance for next‐generation energy‐efficient and compact power conversion systems. Owing to suppressed gate leakage and enlarged gate swing, III‐N insulatedgate devices are highly preferred over the conventional Schottkygate counterparts for high‐voltage power switches. Meanwhile, surface passivation with dielectric deposited in the gate–drain access region is necessary to allievate the surface‐state induced current collapse in high‐voltage switching operation. Therefore, effective interface engineering techniques for III‐N devices are of critical significance to enhance threshold‐voltage stability and dynamic performance. Chen et al. (pp. <ext-link ext-link-type="uri" xlink:href="http://doi.wiley.com/10.1002/pssa.201431712" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">1059–1065</ext-link>) present an interface enhancement technology featuring <italic>in situ</italic> low‐damage NH<sub>3</sub>/Ar/N<sub>2</sub> pre‐gate plasma treatment prior to the Al<sub>2</sub>O<sub>3</sub> gatedielectric deposition. This technology can effectively remove the native oxide while forming a monocrystal‐like nitridation interfaciallayer (NIL) with Al–N bonds on the III‐N surface, enabling the realization of high‐performance and high‐stability III‐N insulatedgate devices. The Al<sub>2</sub>O<sub>3</sub>(NIL)/GaN/AlGaN/GaN MIS heterostructures with high‐quality interface exhibit record electrical characteristics, including a steep subthreshold swing of ∼64 mV/dec, a small hysteresis of ∼0.09 V, tiny <italic>f/T</italic>‐dispersions in the capacitance– voltage characteristics, and low interface trap density.</p> <p>[To honour the laureates of the Nobel Prize in Physics 2014, the cover of this pss (a) issue shows a specially designed pss logo assembled from blue nitride LEDs (courtesy of Armin Dadgar, Technical University of Magdeburg)]. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjmx5p16p" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>