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HARVARD Citation
Sochacki, T. et al. (n.d.). Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed. Physica status solidi. 252 (5), pp. 1172-1179. [Online].
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Sochacki, T. et al. (n.d.). Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed. Physica status solidi. 252 (5), pp. 1172-1179. [Online].