Dominant nonradiative centers in InGaN single quantum well by time‐resolved and two‐wavelength excited photoluminescence. Issue 5 (17th December 2014)

• Record Type: Journal Article
• Authors: Julkarnain, M.; Murakoshi, N.; Islam, A. Z. M. Touhidul; Fukuda, T.; Kamata, N.; Arakawa, Y.
• Is Part Of: Physica status solidi. Volume 252:Issue 5(2015:May)
• Page Start: 952
• Page End: 955
• Publication Date: 2014-12-17
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201451499
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <sec id="pssb201451499-sec-0001" sec-type="section"> <p>The nonradiative recombination processes in undoped InGaN single quantum well (SQW) grown by MOCVD method have been studied by time‐resolved and two‐wavelength excited photoluminescence. External quantum efficiency and carrier recombination lifetime decreases with increasing the excitation density which can be explained by an enhanced nonradiative recombination rate. A dominant nonradiative center with an optical activation energy of around 1.17 eV has been detected inside and/or hetero‐interface of SQW, which might be an important clue for determining their origin and eliminating them during growth process.</p> </sec> </abstract>