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HARVARD Citation
Li, X. et al. (n.d.). Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition. Physica status solidi. 252 (5), pp. 1089-1095. [Online].
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Li, X. et al. (n.d.). Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition. Physica status solidi. 252 (5), pp. 1089-1095. [Online].