Cite
HARVARD Citation
Upadhyay, P. et al. (n.d.). Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation. Physica status solidi. 252 (5), pp. 989-995. [Online].
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Upadhyay, P. et al. (n.d.). Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation. Physica status solidi. 252 (5), pp. 989-995. [Online].