Semi‐polar (112¯2)‐GaN templates grown on 100 mm trench‐patterned r‐plane sapphire. Issue 5 (20th March 2015)

• Record Type: Journal Article
• Authors: Brunner, Frank; Edokam, Francis; Zeimer, Ute; John, Wilfred; Prasai, Deepak; Krüger, Olaf; Weyers, Markus
• Is Part Of: Physica status solidi. Volume 252:Issue 5(2015:May)
• Page Start: 1189
• Page End: 1194
• Publication Date: 2015-03-20
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201552054
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201552054-sec-0001" sec-type="section"> <p>This report describes the successful realization of high‐quality semi‐polar <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgjkz9dtj2" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:14381656:media:pssb201552054:pssb201552054-math-0009" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mo stretchy="false">(</mml:mo><mml:mn>11</mml:mn><mml:mover accent="true"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mo>¯</mml:mo></mml:mover><mml:mn>2</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:math></alternatives></inline-formula> ‐GaN templates grown on 100 mm diameter <italic>r</italic>‐plane patterned sapphire. Trench patterning is accomplished by plasma etching using a slanted SiN<italic><sub>x</sub></italic> mask that is formed by a resist‐reflow process and subsequent dry etching. Epitaxial overgrowth by MOVPE is optimized with the aid of <italic>in situ</italic> monitoring to trace GaN coalescence behavior and surface morphology. Wafer curvature at growth temperature exceeds typical values of <italic>c</italic>‐oriented GaN, whereas room‐temperature bow is spherical and comparable to polar material. Morphological and structural properties compare well with published data on 2 in. substrates. Threading dislocation densities of about 2 × 10<sup>8</sup> cm<sup>−2</sup> and basal stacking fault densities in the order of 1 × 10<sup>3</sup> cm<sup>−1</sup> are deduced from cathodoluminescence studies. Low residual impurity concentrations ([O, Si] < 1 × 10<sup>17</sup> cm<sup>−3</sup>) have been verified.</p> </sec> </abstract>