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Shen, X. et al. (n.d.). High‐quality GaN film and AlGaN/GaN HEMT grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer. Physica status solidi. 252 (5), pp. 1075-1078. [Online].
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Shen, X. et al. (n.d.). High‐quality GaN film and AlGaN/GaN HEMT grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer. Physica status solidi. 252 (5), pp. 1075-1078. [Online].