A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells. Issue 9 (3rd February 2015)

• Record Type: Journal Article
• Authors: Li, Jianjun; Zhang, Yi; Zhao, Wei; Nam, Dahyun; Cheong, Hyeonsik; Wu, Li; Zhou, Zhiqiang; Sun, Yun
• Is Part Of: Advanced energy materials. Volume 5:Issue 9(2015:May)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-02-03
• Subjects: Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201402178
• Languages: English
• ISSNs: 1614-6832

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The influence of a prealloying process on the formation of MoSe₂ and thus on the performance of Cu₂ZnSnSe₄ (CZTSe) solar cells is investigated using sputtering deposition and post‐annealing approaches. The dense alloy layer, which is made by a low‐temperature prealloying process, acts as a temporary Se diffusion barrier during a subsequent high‐temperature selenization process. The formation of thick interfacial MoSe₂ can be suppressed effectively by this temporary barrier, cooperating with subsequent quick formation of compact CZTSe layer. The thickness of interfacial MoSe₂ layer in CZTSe solar cells can be tailored by adjusting the preannealing process during selenization. As a consequence, the series resistance of CZTSe solar cells is reduced to a low level (≈0.6 Ω cm²), and the performance of CZTSe solar cells is improved significantly. A CZTSe solar cell with efficiency of 8.7% is fabricated.</p> </abstract>