Effect of second-order temperature jump in Metal-Oxide-Semiconductor Field Effect Transistor with Dual-Phase-Lag model. Issue 1 (January 2015)

• Record Type: Journal Article
• Authors: Nasri, F.; Ben Aissa, M.F.; Belmabrouk, H.
• Is Part Of: Microelectronics journal. Volume 46:Issue 1(2015)
• Page Start: 67
• Page End: 74
• Publication Date: 2015-01
• Subjects: Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2014.10.007
• Languages: English
• ISSNs: 0959-8324

Abstract

<abstract abstract-type="author" id="ab0005"> <title id="sect0005">Abstract</title> <sec> <p id="sp0065">The present numerical investigation is concerned with the role of second-order temperature jump in a horizontal planar micro-channel heat transfer. We solve numerically Dual-Phase-Lag model in a two dimensional configuration coupled with a new jump boundary condition. The nanodevice of model consists of Metal-Oxide-Semiconductor Field Effect Transistor with either uniform or non-uniform heat generation. A new temperature jump boundary condition of first and second order is used especially in the oxide–semiconductor interface. The finite element method is used to bring forth the results for a 10 nm channel length of the transistor. Thermal properties of transistor device have been investigated for different orders of the temperature jump boundary condition. It has already been deduced that the increasing orders of temperature jump boundary condition lead to an increase of phonon-wall collisions. This new condition can lead to a significant increase in the heat flux and the calculated lattice temperature.</p> </sec> </abstract>