A resistive-feedback LNA in 65 nm CMOS with a gate inductor for bandwidth extension. Issue 1 (January 2015)

• Record Type: Journal Article
• Authors: Huang, Dong; Diao, Shengxi; Qian, Weiqiang; Lin, Fujiang
• Is Part Of: Microelectronics journal. Volume 46:Issue 1(2015)
• Page Start: 103
• Page End: 110
• Publication Date: 2015-01
• Subjects: Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2014.10.012
• Languages: English
• ISSNs: 0959-8324

Abstract

<abstract abstract-type="author" id="ab0005"> <title id="sect0005">Abstract</title> <sec> <p id="sp0100">In order to get a wideband and flat gain, a resistive-feedback LNA using a gate inductor to extend bandwidth is proposed in this paper. This LNA is based on an improved resistive-feedback topology with a source follower feedback to match input. A relative small inductor is connected in series to transistor׳s gate, which boosts transistor׳s effective transconductance, compensates gain loss and then leads the proposed LNA with a flat gain and wider bandwidth. Moreover, the LNA׳s noise is partially inhibited by the gate inductor, especially at high frequency. Realized in standard 65-nm CMOS process, this LNA dissipates 12 mW from a 1.5-V supply while its core area is 0.076 mm². Across 0.4–10.6 GHz band, the proposed LNA provides 9.5±0.9 dB power gain (<italic>S</italic>₂₁), better than −11-dB input matching, 3.5-dB minimum noise figure, and higher than −17.2-dBm <italic>P</italic>_{1 dB}.</p> </sec> </abstract>