Design and implementation of a micro-power CMOS voltage reference circuit based on thermal compensation of Vgs. Issue 1 (January 2015)
- Record Type:
- Journal Article
- Title:
- Design and implementation of a micro-power CMOS voltage reference circuit based on thermal compensation of Vgs. Issue 1 (January 2015)
- Main Title:
- Design and implementation of a micro-power CMOS voltage reference circuit based on thermal compensation of Vgs
- Authors:
- Chouhan, Shailesh Singh
Halonen, Kari - Abstract:
- <abstract abstract-type="author" id="ab0005"> <title id="sect0005">Abstract</title> <sec> <p id="sp0060">In this work a simple all MOS voltage reference circuit has been proposed. To obtain reference output voltage, the thermal compensation has been generated by using a series composite NMOSTs. The voltage reference circuit has been fabricated in a standard 0.18 μm CMOS technology. The proposed circuit is capable of working for the supply voltage ranging from 1.25 V to 2 V. The maximum power dissipation of the proposed circuit is 0.48 μW at the supply voltage of 2 V. The measurement has been performed over a set of 10 samples. It resulted in the mean temperature coefficient (TC) of 19.302 ppm/°C for the temperature range of −40 °C to 85 °C. The measured mean line sensitivity is 2.217 mV/V for the supply voltage ranging from 1.25 V to 2 V at the room temperature. The measured mean power supply rejection ratio at 10 Hz and 1 MHz is −55.31 dB and −16.67 dB respectively for the supply voltage of 1.8 V. Moreover, the measured mean noise density without any filtering capacitor at 100 Hz and 100 kHz are <inline-formula><alternatives><inline-graphic xlink:href="ark:/27927/pgh30rpc3sz" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="si0004.gif" overflow="scroll" id="d13e605" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>12.39</mml:mn><mml:mspace width="0.25em" /><mml:mi mathvariant="normal">μ</mml:mi><mml:mi<abstract abstract-type="author" id="ab0005"> <title id="sect0005">Abstract</title> <sec> <p id="sp0060">In this work a simple all MOS voltage reference circuit has been proposed. To obtain reference output voltage, the thermal compensation has been generated by using a series composite NMOSTs. The voltage reference circuit has been fabricated in a standard 0.18 μm CMOS technology. The proposed circuit is capable of working for the supply voltage ranging from 1.25 V to 2 V. The maximum power dissipation of the proposed circuit is 0.48 μW at the supply voltage of 2 V. The measurement has been performed over a set of 10 samples. It resulted in the mean temperature coefficient (TC) of 19.302 ppm/°C for the temperature range of −40 °C to 85 °C. The measured mean line sensitivity is 2.217 mV/V for the supply voltage ranging from 1.25 V to 2 V at the room temperature. The measured mean power supply rejection ratio at 10 Hz and 1 MHz is −55.31 dB and −16.67 dB respectively for the supply voltage of 1.8 V. Moreover, the measured mean noise density without any filtering capacitor at 100 Hz and 100 kHz are <inline-formula><alternatives><inline-graphic xlink:href="ark:/27927/pgh30rpc3sz" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="si0004.gif" overflow="scroll" id="d13e605" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>12.39</mml:mn><mml:mspace width="0.25em" /><mml:mi mathvariant="normal">μ</mml:mi><mml:mi mathvariant="normal">V</mml:mi><mml:mo>/</mml:mo><mml:msqrt><mml:mrow><mml:mi>Hz</mml:mi></mml:mrow></mml:msqrt></mml:math></alternatives></inline-formula> and <inline-formula><alternatives><inline-graphic xlink:href="ark:/27927/pgh30rpcmp2" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="si0005.gif" overflow="scroll" id="d13e620" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>0.39</mml:mn><mml:mspace width="0.25em" /><mml:mi mathvariant="normal">μ</mml:mi><mml:mi mathvariant="normal">V</mml:mi><mml:mo>/</mml:mo><mml:msqrt><mml:mrow><mml:mi>Hz</mml:mi></mml:mrow></mml:msqrt></mml:math></alternatives></inline-formula> respectively. Due to its simple circuit implementation, the active area of the circuit is 0.0077 mm<sup>2</sup>.</p> </sec> </abstract> … (more)
- Is Part Of:
- Microelectronics journal. Volume 46:Issue 1(2015)
- Journal:
- Microelectronics journal
- Issue:
- Volume 46:Issue 1(2015)
- Issue Display:
- Volume 46, Issue 1 (2015)
- Year:
- 2015
- Volume:
- 46
- Issue:
- 1
- Issue Sort Value:
- 2015-0046-0001-0000
- Page Start:
- 36
- Page End:
- 42
- Publication Date:
- 2015-01
- Subjects:
- Microelectronics -- Periodicals
Microélectronique -- Périodiques
Microelectronics
Electronic journals
Journals - contents and abstracts
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621.3805 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/5877621.html ↗
http://www.sciencedirect.com/science/journal/00262692 ↗
http://www.intute.ac.uk/sciences/cgi-bin/fullrecord.pl?handle=lesa.1012319367 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.mejo.2014.09.015 ↗
- Languages:
- English
- ISSNs:
- 0959-8324
- Deposit Type:
- Legaldeposit
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