Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device. (5th January 2015)

• Record Type: Journal Article
• Authors: Chou, Po-Cheng; Chen, Huey-Ing; Liu, I-Ping; Chen, Chun-Chia; Liou, Jian-Kai; Hsu, Kai-Siang; Liu, Wen-Chau
• Is Part Of: International journal of hydrogen energy. Volume 40:Number 1(2015)
• Page Start: 729
• Page End: 734
• Publication Date: 2015-01-05
• Subjects: Hydrogen as fuel -- Periodicals; Hydrogène (Combustible) -- Périodiques; Hydrogen as fuel; Periodicals; 665.81
• DOI: 10.1016/j.ijhydene.2014.10.142
• Languages: English
• ISSNs: 0360-3199

Abstract

<abstract xml:lang="en" abstract-type="author" id="abs0010"> <title id="sectitle0010">Abstract</title> <sec> <p id="abspara0010">An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (Δ<italic>R</italic>/<italic>R</italic>)), an extremely low detecting limit (&lt;50 ppm H₂/air), a high sensing response speed (7 s), a lower operating temperature (≦350 °C) and a widespread sensing range of hydrogen concentration (50–10, 000 ppm H₂/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.</p> </sec> </abstract>