Enhancement of Thermoelectric Performance of n‐Type PbSe by Cr Doping with Optimized Carrier Concentration. Issue 8 (7th January 2015)

• Record Type: Journal Article
• Authors: Zhang, Qian; Chere, Eyob Kebede; McEnaney, Kenneth; Yao, Mengliang; Cao, Feng; Ni, Yizhou; Chen, Shuo; Opeil, Cyril; Chen, Gang; Ren, Zhifeng
• Is Part Of: Advanced energy materials. Volume 5:Issue 8(2015:Apr.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-01-07
• Subjects: Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201401977
• Languages: English
• ISSNs: 1614-6832

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n‐type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm² V⁻¹s⁻¹ at lower carrier concentration. A larger average <italic>ZT</italic> value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10¹⁸–10¹⁹ cm⁻³. Even though the highest room temperature power factor ≈3.3 × 10⁻³ W m⁻¹ K⁻² is found in 1 at% Mo‐doped PbSe, the highest <italic>ZT</italic> is achieved in Cr‐doped PbSe. Combined with the lower thermal conductivity, <italic>ZT</italic> is improved to ≈0.4 at room temperature and peak <italic>ZT</italic>s of ≈1.0 are observed at ≈573 K for Pb_0.9925Cr_0.0075Se and ≈673 K for Pb_0.995Cr_0.005Se. The calculated device efficiency of Pb_0.995Cr_0.005Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n‐type PbSe materials reported in the literature.</p> </abstract>