A Facile and Universal Top‐Down Method for Preparation of Monodisperse Transition‐Metal Dichalcogenide Nanodots1. Issue 18 (11th March 2015)

• Record Type: Journal Article
• Authors: Zhang, Xiao; Lai, Zhuangchai; Liu, Zhengdong; Tan, Chaoliang; Huang, Ying; Li, Bing; Zhao, Meiting; Xie, Linghai; Huang, Wei; Zhang, Hua
• Is Part Of: Angewandte Chemie international edition. Volume 54:Issue 18(2015)
• Page Start: 5425
• Page End: 5428
• Publication Date: 2015-03-11
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201501071
• Languages: English
• ISSNs: 1433-7851

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Despite unique properties of layered transition‐metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS₂, WS₂, ReS₂, TaS₂, MoSe₂ and WSe₂) and NbSe₂ NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the <italic>N</italic>‐methyl‐2‐pyrrolidone when post‐treated with n‐hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof‐of‐concept application, memory devices using TMD NDs, for example, MoSe₂, WS₂, or NbSe₂, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write‐once‐read‐many behavior. These high‐quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine.</p> </abstract>