Oxide Semiconductors: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors (Adv. Mater. 16/2015). (April 2015)

• Record Type: Journal Article
• Authors: Ou, Gang; Li, Dongke; Pan, Wei; Zhang, Qinghua; Xu, Ben; Gu, Lin; Nan, Cewen; Wu, Hui
• Is Part Of: Advanced materials. Volume 27:Number 16(2015)
• Page Start: 2675
• Page End: 2675
• Publication Date: 2015-04
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201570110
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201570110-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>W. Pan, H. Wu, and co‐workers highlight engineering the bandgap of oxides through rapid arc‐melting on page 2589. Rich defects are implanted by a fast melting and cooling process, resulting in narrowed bandgap and enhanced optical absorption in a series of oxides including ZnO, Y₂O₃, ZrO₂, Nb₂O₅, In₂O₃, SnO₂, CeO₂, Cu₂O, and WO₃. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjjm88sxx" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>