Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors. (10th March 2015)

• Record Type: Journal Article
• Authors: Ou, Gang; Li, Dongke; Pan, Wei; Zhang, Qinghua; Xu, Ben; Gu, Lin; Nan, Cewen; Wu, Hui
• Is Part Of: Advanced materials. Volume 27:Number 16(2015)
• Page Start: 2589
• Page End: 2594
• Publication Date: 2015-03-10
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201405763
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201405763-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The bandgap of a series of oxide semiconductors</bold> is narrowed by a quick and facile arc‐melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc‐melted oxide, such as enhanced photocatalytic properties of the arc‐melted ZnO under visible light. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjjm88pk9" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>