Large Room‐Temperature Electroresistance in Dual‐Modulated Ferroelectric Tunnel Barriers. (16th March 2015)

• Record Type: Journal Article
• Authors: Radaelli, Greta; Gutiérrez, Diego; Sánchez, Florencio; Bertacco, Riccardo; Stengel, Massimiliano; Fontcuberta, Josep
• Is Part Of: Advanced materials. Volume 27:Number 16(2015)
• Page Start: 2602
• Page End: 2607
• Publication Date: 2015-03-16
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201405117
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201405117-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Pt/BaTiO₃/La_0.7Sr_0.3MnO₃ tunnel junctions</bold>, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjjm88pvf" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>