Highly air stable passivation of graphene based field effect devices1. Issue 8 (28th February 2015)

• Record Type: Journal Article
• Authors: Sagade, Abhay A.; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich
• Is Part Of: Nanoscale. Volume 7:Issue 8(2015)
• Page Start: 3558
• Page End: 3564
• Publication Date: 2015-02-28
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c4nr07457b
• Languages: English
• ISSNs: 2040-3364

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj40zrzkr" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />As the GFETs are sensitive to surrounding environment and changes performance, proper passivation is required. Here usage of Al₂O₃ as an passivation layer is demonstrated with selection of proper seed layer.</p> </abstract>