Optimized growth of graphene on SiC: from the dynamic flip mechanism. Issue 10 (14th March 2015)

• Record Type: Journal Article
• Authors: Wang, Dandan; Liu, Lei; Chen, Wei; Chen, Xiaobo; Huang, Han; He, Jun; Feng, Yuan-Ping; Wee, A. T. S.; Shen, D. Z.
• Is Part Of: Nanoscale. Volume 7:Issue 10(2015)
• Page Start: 4522
• Page End: 4528
• Publication Date: 2015-03-14
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c4nr07197b
• Languages: English
• ISSNs: 2040-3364

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj92pb8kw" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />A vacancy assisted Si–C bond flipping model, together with an energetic-beam controlled growth method, has been proposed for graphene growth on SiC.</p> </abstract>