A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors1. Issue 9 (4th March 2015)

• Record Type: Journal Article
• Authors: Kim, Yun Ji; Lee, Young Gon; Jung, Ukjin; Lee, Sangchul; Lee, Sang Kyung; Lee, Byoung Hun
• Is Part Of: Nanoscale. Volume 7:Issue 9(2015)
• Page Start: 4013
• Page End: 4019
• Publication Date: 2015-03-04
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c4nr06397j
• Languages: English
• ISSNs: 2040-3364

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj4108srf" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />We report on a facile process sequence that can improve the time-dependent stability of graphene field-effect transistors (GFETs). By properly combining some simple additional processes, high performance CVD GFETs with symmetrical <italic>I</italic>–<italic>V</italic> characteristics can be obtained. The stable operation of these GFETs over two weeks has been confirmed in open air.</p> </abstract>