EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon‐rich conditions. Issue 3 (13th November 2014)

• Record Type: Journal Article
• Authors: Savchenko, Dariya; Kalabukhova, Ekaterina; Shanina, Bela; Pöppl, Andreas; Yukhymchuk, Volodymyr; Lančok, Jan; Ubyivovk, Evgenii; Mokhov, Evgenii
• Is Part Of: Physica status solidi. Volume 252:Issue 3(2015:Mar.)
• Page Start: 566
• Page End: 572
• Publication Date: 2014-11-13
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201451452
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201451452-sec-0001" sec-type="section"> <p>X‐band field‐sweep electron spin echo and pulsed electron nuclear double resonance (ENDOR) spectroscopy were used to study n‐type 15R SiC wafers grown under carbon (C)‐rich conditions with the aim to verify the recently proposed concept that nitrogen (N) donors substitute both carbon (C) and silicon (Si) sites and may occupy nonequivalent positions at Si sites. It was found that besides the ¹⁴N ENDOR spectra of the C substituting quasicubic "k1", "k2", and "k3" positions five doublet lines due to ¹⁴N nuclei at other lattice positions were observed in the ENDOR spectrum of highly compensated C‐rich n‐type 15R SiC. Three of them with the hyperfine interaction (HFI) constants 34.66, 32.20, and 29.77 MHz were attributed to the N donors substituting "k1", "k2", and "k3" positions at Si sites. Two other additional ENDOR spectra were explained by the presence of the C antisite (C_Si) defects in C‐rich 15R SiC, which leads to the formation of C_SiN_C complexes with donor levels close to the conduction‐band minimum and isotropic ¹⁴N HFI constants of 21.58 and 25.94 MHz. The energy levels of N donors have been evaluated by comparing the number of ENDOR spectra observed in C‐rich 15R SiC with different degrees of compensation.</p> </sec> </abstract>