Towards RIP using free‐electron laser SFX data. (4th February 2015)

• Record Type: Journal Article
• Authors: Galli, Lorenzo; Son, Sang‐Kil; White, Thomas A.; Santra, Robin; Chapman, Henry N.; Nanao, Max H.
• Is Part Of: Journal of synchrotron radiation. Volume 22:Part 2(2015)
• Page Start: 249
• Page End: 255
• Publication Date: 2015-02-04
• Subjects: Synchrotron radiation -- Periodicals; Free electron lasers -- Periodicals; 539.73505
• DOI: 10.1107/S1600577514027854
• Languages: English
• ISSNs: 0909-0495

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Here, it is shown that simulated native serial femtosecond crystallography (SFX) cathepsin B data can be phased by rapid ionization of sulfur atoms. Utilizing standard software adopted for radiation‐damage‐induced phasing (RIP), the effects on both substructure determination and phasing of the number of collected patterns and fluences are explored for experimental conditions already available at current free‐electron laser facilities.</p> </abstract>