Performance Potential and Limit of MoS2 Transistors. (13th January 2015)

• Record Type: Journal Article
• Authors: Li, Xuefei; Yang, Lingming; Si, Mengwei; Li, Sichao; Huang, Mingqiang; Ye, Peide; Wu, Yanqing
• Is Part Of: Advanced materials. Volume 27:Number 9(2015)
• Page Start: 1547
• Page End: 1552
• Publication Date: 2015-01-13
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201405068
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201405068-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>High‐performance MoS₂ transistors scaled down to 100 nm</bold> are studied at various temperatures down to 20 K, where a highest drive current of 800 μA μm⁻¹ can be achieved. Extremely low electrical noise of 2.8 × 10⁻¹⁰ μm² Hz⁻¹ at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally observed and its origin of self‐heating is identified using pulsed‐current–voltage measurements. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj42zdn3f" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>