Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals1. Issue 8 (28th February 2015)

• Record Type: Journal Article
• Authors: Chang, Jingjing; Lin, Zhenhua; Lin, Ming; Zhu, Chunxiang; Zhang, Jie; Wu, Jishan
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 8(2015)
• Page Start: 1787
• Page End: 1793
• Publication Date: 2015-02-28
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c4tc02257b
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj413w1m2" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />FETs based on ZnO doped with F and alkali metals showed largely improved charge carrier mobility, shelf-life stability and bias stress stability.</p> </abstract>